1769 results
Press release
  911. High-precision drives released from vacuum  
PTB and IMMS receive iENA bronze medal for new seal configuration for more precise displacement measurement in high-tech applications  
Reference
  912. High-level Modeling für analoge Module mit SystemC  
E. Ulicna, In: 7.Chemnitzer Fachtagung Mikromechanik & Mikroelektronik, S. 36-39. Technische Universität Chemnitz, 2005  
Reference
  913. High-level Modeling für analoge Module mit SystemC  
E. Ulicna, 26.10.2005, 7.Chemnitzer Fachtagung Mikromechanik & Mikroelektronik, Chemnitz  
Reference
  914. High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts  
Wael Jatal, Uwe Baumann Katja Tonisch Frank Schwierz Jörg Pezoldt Electron Device Letters, IEEE, Volume:36, Issue: 2, Page(s) 123-125, DOI: http://dx.doi.org/10.1109/LED.2014.2379664  
Reference
  915. High-bandwidth (BiCMOS, OEIC) for optical storage systems  
M. Heise, IEEE Internt. Solid-State Circuits Conference (page 384-385), San Francisco, CA, 15-17 Feb. 1999  
Reference
  916. High Voltage RF-Multiplexer for medical Applications – Development of a Test Environment up to 100 V and 100 MHz  
Bjoern Bieske, Dagmar Kirsten tm - Technisches Messen, 85(5), pp. 302-311, DOI: https://doi.org/10.1515/teme-2017-0117  
Reference
  917. High Voltage RF-Multiplexer for Medical Applications  
Bjoern Bieske, Dagmar Kirsten Sensorica 2017, IEEE Workshop, http://d-nb.info/1137195215, 8-9 June 2017, Mülheim an der Ruhr  
Reference
  918. High Speed Backplane  
B. Bieske, Ilmenau, November 2000  
Reference
  919. High reliability EEPROM design for high-temperature applications  
D. Kirsten, S. Richter D. Nuernbergk St. Richter Second Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI), Grenoble, Frankreich, 8.-10. März, 2006  
Reference
  920. High Precision Positioning and Measurement Systems for Microtribotesting  
O. Mollenhauer, S.I.-U. Ahmed F. Spiller H. Haefke Tribotest, Vol. 12 / 2006, p. 189 - 199  
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