821. Hierarchische Entwurfsmethodik mit automatischer Bottom-Up-Topologiemodifikation und spezifikationsgetriebener Dimensionierung. (Kooperation der TU Ilmenau & IMMS GmbH).   D. Krauße, E. Schäfer Prof. Dr. R. Sommer Dr. E. Hennig 11. ITG/GMM-Fachtagung ANALOG 2010, 22.03.-24.03.2010, Erfurt, in Proceedings  

  822. High - Speed Präzisionsantriebe für die Mikrosystemtechnik   Ch. Schäffel, E. Saffert MTT Technologoie-Symposium, Erfurt, Mai 1998  

  823. High Precision Positioning and Measurement Systems for Microtribology   S.I. Ahmed, O. Mollenhauer F. Spiller Proceedings of TRIMIS 2003, Neuchâtel, Switzerland, 01 - 03 June 2003  

  824. High Precision Positioning and Measurement Systems for Microtribotesting   O. Mollenhauer, S.I.-U. Ahmed F. Spiller H. Haefke Tribotest, Vol. 12 / 2006, p. 189 - 199  

  825. High reliability EEPROM design for high-temperature applications   D. Kirsten, S. Richter D. Nuernbergk St. Richter Second Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI), Grenoble, Frankreich, 8.-10. März, 2006  

  826. High Speed Backplane   B. Bieske, Ilmenau, November 2000  

  827. High Voltage RF-Multiplexer for Medical Applications   Bjoern Bieske, Dagmar Kirsten Sensorica 2017, IEEE Workshop, http://d-nb.info/1137195215, 8-9 June 2017, Mülheim an der Ruhr  

  828. High Voltage RF-Multiplexer for medical Applications – Development of a Test Environment up to 100 V and 100 MHz   Bjoern Bieske, Dagmar Kirsten tm - Technisches Messen, 85(5), pp. 302-311, DOI: https://doi.org/10.1515/teme-2017-0117  

  829. High-bandwidth (BiCMOS, OEIC) for optical storage systems   M. Heise, IEEE Internt. Solid-State Circuits Conference (page 384-385), San Francisco, CA, 15-17 Feb. 1999  

  830. High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts   Wael Jatal, Uwe Baumann Katja Tonisch Frank Schwierz Jörg Pezoldt Electron Device Letters, IEEE, Volume:36, Issue: 2, Page(s) 123-125, DOI: http://dx.doi.org/10.1109/LED.2014.2379664