Current Publication
High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts
Wael Jatal1.
Uwe Baumann2.
Katja Tonisch1.
Frank Schwierz1.
Jörg Pezoldt1.
Electron Device Letters, IEEE, Volume:36, Issue: 2, Page(s) 123-125, DOI: dx.doi.org/10.1109/LED.2014.2379664
1Inst. für Mikro-und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany.
2IMMS Institut für Mikroelektronik- und Mechatronik-Systeme gemeinnützige GmbH, D-98693 Ilmenau, Germany.