Aktuelle Publikation
High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts
Wael Jatal1, Uwe Baumann2, Katja Tonisch1, Frank Schwierz1, Jörg Pezoldt1
in IEEE Electron Device Letters, vol. 36, no. 2, pp. 123-125, 2015, DOI: dx.doi.org/10.1109/LED.2014.2379664
1Technical University of Ilmenau, Institute for Micro- and Nanotechnologies (IMN) MacroNano®, 98684 Ilmenau, P.O. Box 10 05 65, Germany, 2IMMS Institut für Mikroelekronik- und Mechatronik-Systeme gemeinnützige GmbH (IMMS GmbH), Ehrenbergstraße 27, 98693 Ilmenau, Germany