Design of RF building blocks
For the design kit of X-FAB Semiconductor Foundries AG, a library with typical RF building blocks and a dedicated bias cell was designed and characterized. They shall demonstrate the potential of the technology and facilitate the entrance into RF ASIC design for customers.
- Technology: 0.6 µm BiCMOS
- Building blocks: Bias, VCOs, LNAs, Prescaler, PA, Mixer
- Application area: ISM-Band (868 MHz)
- Environmental conditions: 2.5 V…5.5 V, -40°C…85°C
- Chip photo of a LNA test IC
- S-Parameter and noise figure of the LNA
